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mrf6s21060nr1 mrf6s21060nbr1 1 rf device data freescale semiconductor rf power field effect transistors n-channel enhancement-mode lateral mosfets designed for w-cdma base station applications with frequencies from 2110 to 2170 mhz. suitable for tdma, cdma and multicarrier amplifier applications. to be used in class ab for pcn- pcs/cellular radio, wll and td-scdma applications. ? typical 2-carrier w-cdma performance: v dd = 28 volts, i dq = 610 ma, p out = 14 watts avg., f = 2115.5 mhz, channel bandwidth = 3.84 mhz, par = 8.5 db @ 0.01% probability on ccdf. power gain 15.5 db drain efficiency 26% im3 @ 10 mhz offset -37 dbc in 3.84 mhz bandwidth acpr @ 5 mhz offset -40 dbc in 3.84 mhz bandwidth ? capable of handling 5:1 vswr, @ 28 vdc, 2140 mhz, 60 watts cw output power features ? characterized with series equivalent large-signal impedance parameters ? internally matched for ease of use ? qualified up to a maximum of 32 v dd operation ? integrated esd protection ? designed for lower memory effects and wide instantaneous bandwidth applications ? 225 c capable plastic package ? n suffix indicates lead-free terminations. rohs compliant. ? in tape and reel. r1 suffix = 500 units per 44 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain-source voltage v dss -0.5, +68 vdc gate-source voltage v gs -0.5, +12 vdc storage temperature range t stg -65 to +150 c case operating temperature t c 150 c operating junction temperature (1,2) t j 225 c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 79 c, 60 w cw case temperature 76 c, 14 w cw r jc 0.89 1.04 c/w 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/development tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes - an1955. document number: mrf6s21060n rev. 5, 12/2008 freescale semiconductor technical data mrf6s21060nr1 mrf6s21060nbr1 2110-2170 mhz, 14 w avg., 28 v 2 x w-cdma lateral n-channel rf power mosfets case 1486-03, style 1 to-270 wb-4 plastic mrf6s21060nr1 case 1484-04, style 1 to-272 wb-4 plastic mrf6s21060nbr1 ? freescale semiconductor, inc., 2005-2006, 2008. all rights reserved.
2 rf device data freescale semiconductor mrf6s21060nr1 mrf6s21060nbr1 table 3. esd protection characteristics test methodology class human body model (per jesd22-a114) 1b (minimum) machine model (per eia/jesd22-a115) a (minimum) charge device model (per jesd22-c101) iii (minimum) table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd22-a113, ipc/jedec j-std-020 3 260 c table 5. electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 68 vdc, v gs = 0 vdc) i dss 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss 1 adc gate-source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss 1 adc on characteristics (dc) gate threshold voltage (v ds = 10 vdc, i d = 200 adc) v gs(th) 1.5 2.2 2.5 vdc gate quiescent voltage (v dd = 28 vdc, i d = 610 madc, measured in functional test) v gs(q) 2 2.8 4 vdc drain-source on-voltage (v gs = 10 vdc, i d = 2.0 adc) v ds(on) 0.3 vdc dynamic characteristics (1) reverse transfer capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss 1.5 pf functional tests (in freescale test fixture, 50 ohm system) v dd = 28 vdc, i dq = 610 ma, p out = 14 w avg., f1 = 2115.5 mhz, f2 = 2122.5 mhz, 2-carrier w-cdma, 3.84 mhz channel bandwidth carriers. acpr measured in 3.84 mhz channel bandwidth @ 5 mhz offset. im3 measured in 3.84 mhz bandwidth @ 10 mhz offset. par = 8.5 db @ 0.01% probability on ccdf. power gain g ps 13.5 15.5 16.5 db drain efficiency d 24.5 26 % intermodulation distortion im3 -37 -35 dbc adjacent channel power ratio acpr -40 -38 dbc input return loss irl -14 -10 db 1. part is internally matched both on input and output.
mrf6s21060nr1 mrf6s21060nbr1 3 rf device data freescale semiconductor figure 1. mrf6s21060nr1(nbr1) test circuit schematic z10 0.270 x 0.300 microstrip z11 0.230 x 0.080 microstrip z12 0.310 x 0.300 microstrip z13 0.830 x 0.080 microstrip z14 0.200 x 0.080 microstrip z15 1.000 x 0.080 microstrip z16 1.100 x 0.070 microstrip pcb arlon cuclad 250gx-0300-55-22, 0.030 , r = 2.55 z1 0.250 x 0.080 microstrip z2 0.860 x 0.080 microstrip z3 0.300 x 0.405 microstrip z4 0.350 x 0.080 microstrip z5 0.350 x 0.755 microstrip z6 0.680 x 0.080 microstrip z7 0.115 x 0.755 microstrip z8 0.115 x 1.000 microstrip z9 0.240 x 1.000 microstrip v bias v supply rf output rf input dut c6 c1 c2 c3 c4 c5 r1 z1 z2 z3 z4 c7 z9 c8 z10 z8 z5 r2 z6 r3 z7 z11 z12 z13 z14 z15 z16 v supply c9 c10 c11 table 6. mrf6s21060nr1(nbr1) test circuit component designations and values part description part number manufacturer c1 100 nf chip capacitor cdr33bx104akys kemet c2, c7 4.7 pf chip capacitors atc100b4r7bt500xt atc c3, c8, c9 6.8 pf chip capacitors atc100b6r8bt500xt atc c4, c5, c6, c10, c11 10 f, 35 v chip capacitors grm55dr61h106ka88l murata r1 1 k , 1/4 w chip resistor crcw12061001fkea vishay r2 10 k , 1/4 w chip resistor crcw12061002fkea vishay r3 10 1/4 w chip resistor crcw120610r0fkea vishay
4 rf device data freescale semiconductor mrf6s21060nr1 mrf6s21060nbr1 figure 2. mrf6s21060nr1(nbr1) test circuit component layout mrf6s21060n rev. 3 cut out area c10 c11 c9 c8 c4 c5 c3 c2 r3 r2 c1 c6 r1 c7
mrf6s21060nr1 mrf6s21060nbr1 5 rf device data freescale semiconductor typical characteristics g ps , power gain (db) irl, input return loss (db) im3 (dbc), acpr (dbc) -25 -5 -10 -20 2220 2060 irl g ps acpr im3 f, frequency (mhz) figure 3. 2-carrier w-cdma broadband performance @ p out = 14 watts avg. 2200 2180 2160 2140 2120 2100 2080 16 -46 28 27 26 25 24 -38 -40 -44 d , drain efficiency (%) 15.8 15.6 15.4 15.2 15 14.8 14.6 14.4 14.2 -42 -36 -15 v dd = 28 vdc, p out = 14 w (avg.) i dq = 610 ma, 2-carrier w-cdma 10 mhz carrier spacing, 3.84 mhz channel bandwidth, par = 8.5 db @ 0.01% probability (ccdf) 14 d g ps , power gain (db) irl, input return loss (db) im3 (dbc), acpr (dbc) -24 -6 -9 -15 2220 2060 irl g ps acpr im3 f, frequency (mhz) figure 4. 2-carrier w-cdma broadband performance @ p out = 28 watts avg. 2200 2180 2160 2140 2120 2100 2080 15.6 -34 39 38 37 36 -28 -30 -32 d , drain efficiency (%) 15.4 15.2 15 14.8 14.6 14.4 14.2 -26 -12 v dd = 28 vdc, p out = 28 w (avg.) i dq = 610 ma, 2-carrier w-cdma 10 mhz carrier spacing, 3.84 mhz channel bandwidth, par = 8.5 db @ 0.01% probability (ccdf) 14 d figure 5. two-t one power gain versus output power 10 11 17 1 i dq = 915 ma 763 ma p out , output power (watts) pep 200 g ps , power gain (db) 16 15 13 610 ma 458 ma 305 ma 14 100 v dd = 28 vdc, f1 = 2135 mhz, f2 = 2145 mhz two-tone measurements, 10 mhz tone spacing figure 6. third order intermodulation distortion versus output power -1 0 110 -2 0 -3 0 -4 0 200 -60 -5 0 p out , output power (watts) pep intermodulation distortion (dbc) imd, third order i dq = 305 ma 915 ma 763 ma 458 ma 610 ma v dd = 28 vdc, f1 = 2135 mhz, f2 = 2145 mhz two-tone measurements, 10 mhz tone spacing 100 -18 -21 12
6 rf device data freescale semiconductor mrf6s21060nr1 mrf6s21060nbr1 typical characteristics 200 10 17 1 0 70 p out , output power (watts) cw 10 16 14 12 60 50 40 30 d , drain efficiency (%) g ps , power gain (db) 15 13 11 v dd = 28 vdc i dq = 610 ma f = 2140 mhz d g ps im3 (dbc), acpr (dbc) figure 7. intermodulation distortion products versus tone spacing 10 -60 -1 0 0.1 7th order two-t one spacing (mhz) v dd = 28 vdc, p out = 60 w (pep), i dq = 610 ma two-tone measurements (f1 + f2)/2 = center frequency of 2140 mhz 5th order 3rd order -2 0 -3 0 -4 0 -5 0 1 100 figure 8. pulsed cw output power versus input power figure 9. 2-carrier w-cdma acpr, im3, power gain and drain efficiency versus output power 0 -60 p out , output power (watts) avg. 60 0 -20 40 30 -30 10 10 200 -40 40 57 p3db = 49.986 dbm (99.68 w) p in , input power (dbm) v dd = 28 vdc, i dq = 610 ma pulsed cw, 8 sec(on), 1 msec(off) f = 2140 mhz 53 49 45 43 32 30 36 34 actual ideal 55 51 47 28 figure 10. power gain and drain efficiency versus cw output power figure 11. power gain versus output power p out , output power (watts) cw im3 g ps d , drain efficiency (%), g ps , power gain (db) imd, intermodulation distortion (dbc) p out , output power (dbm) g ps , power gain (db) v dd = 24 v 120 10 16 0 12 11 20 13 14 i dq = 610 ma f = 2140 mhz 50 -50 d acpr 28 v 32 v 38 1 -10 40 60 80 10 20 p1db = 49.252 dbm (84.18 w) 20 -30 c t c = -30 c 85 c 25 c t c = -30 c 85 c 25 c 85 c -30 c 100 -30 c 25 c 85 c 100 25 c 15 100 v dd = 28 vdc, i dq = 610 ma f1 = 2135 mhz, f2 = 2145 mhz 2-carrier w-cdma, 10 mhz carrier spacing, 3.84 mhz channel bandwidth, par = 8.5 db @ 0.01% probability (ccdf) 25 c
mrf6s21060nr1 mrf6s21060nbr1 7 rf device data freescale semiconductor typical characteristics w-cdma test signal figure 12. mttf factor versus junction temperature 10 0.0001 100 0 peak-t o-a verage (db) figure 13. ccdf w-cdma 3gpp, test model 1, 64 dpch, 67% clipping, single-carrier test signal 10 1 0.1 0.01 0.001 24 68 figure 14. 2\carrier w\cdma spectrum f, frequency (mhz) 3.84 mhz channel bw -im3 in 3.84 mhz bw +im3 in 3.84 mhz bw probability (%) (db) +20 +30 0 -10 -40 -50 -60 -70 -80 -20 20 515 10 0 -5 -10 -15 -2 0 -25 2 5 -30 -acpr in 3.84 mhz bw +acpr in 3.84 mhz bw w-cdma. acpr measured in 3.84 mhz channel bandwidth @ 5 mhz offset. im3 measured in 3.84 mhz bandwidth @ 10 mhz offset. par = 8.5 db @ 0.01% probability on ccdf 250 10 9 90 t j , junction temperature ( c) this above graph displays calculated mttf in hours when the device is operated at v dd = 28 vdc, p out = 14 w avg., and d = 26%. mttf calculator available at http://www.freescale.com/rf. select software & tools/development tools/calculators to access mttf calculators by product. 10 7 10 6 10 5 110 130 150 170 190 mttf (hours) 210 230 10 8
8 rf device data freescale semiconductor mrf6s21060nr1 mrf6s21060nbr1 f mhz z source z load 2110 2140 2170 3.31 - j5.35 3.06 - j4.92 3.17 - j5.16 7.59 - j8.39 6.71 - j8.83 5.84 - j8.62 v dd = 28 vdc, i dq = 610 ma, p out = 14 w avg. z o = 10 z load z source z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. z source z load input matching network device under test output matching network figure 15. series equivalent source and load impedance f = 2170 mhz f = 2110 mhz f = 2110 mhz f = 2170 mhz
mrf6s21060nr1 mrf6s21060nbr1 9 rf device data freescale semiconductor td-scdma characterization figure 16. mrf6s21060nr1(nbr1) test circuit schematic td-scdma z11 0.240 x 1.000 microstrip z12* 0.270 x 0.360 microstrip z13 0.230 x 0.080 microstrip z14* 0.588 x 0.290 microstrip z15 0.595 x 0.080 microstrip z16 0.200 x 0.080 microstrip z17 0.935 x 0.080 microstrip z18 0.955 x 0.080 microstrip pcb arlon cuclad 250gx-0300-55-22, 0.030 , r = 2.55 * copper foil tape soldered onto pcb z1 0.250 x 0.080 microstrip z2 0.129 x 0.080 microstrip z3* 0.565 x 0.258 microstrip z4 0.160 x 0.080 microstrip z5* 0.300 x 0.455 microstrip z6 0.350 x 0.080 microstrip z7 0.350 x 0.755 microstrip z8 0.115 x 0.755 microstrip z9 0.680 x 0.080 microstrip z10 0.115 x 1.000 microstrip v bias v supply rf output rf input dut c6 c1 c2 c3 c4 c5 r1 z1 z2 z3 z4 c7 c8 z11 z10 z5 r2 z9 r3 z8 z12 z13 z14 z16 z17 z18 v supply c9 c10 c11 z6 z7 z15 table 7. mrf6s21060nr1(nbr1) test circuit component designations and values td-scdma part description part number manufacturer c1 100 nf chip capacitor cdr33bx104akys kemet c2, c7 4.7 pf chip capacitors atc100b4r7bt500xt atc c3, c8, c9 6.8 pf chip capacitors atc100b6r8bt500xt atc c4, c5, c6, c10, c11 10 f, 35 v chip capacitors grm55dr61h106ka88l murata r1 1 k , 1/4 w chip resistor crcw12061001fkea vishay r2 10 k , 1/4 w chip resistor crcw12061002fkea vishay r3 10 1/4 w chip resistor crcw120610r0fkea vishay
10 rf device data freescale semiconductor mrf6s21060nr1 mrf6s21060nbr1 figure 17. mrf6s21060nr1(nbr1) test circuit component layout td-scdma mrf6s21060n rev. 3 cut out area r1 r2 c6 c1 c2 r3 c7 c3 c5 c4 c8 c9 c10 c11
mrf6s21060nr1 mrf6s21060nbr1 11 rf device data freescale semiconductor typical characteristics -60 0 p out , output power (watts) avg. 0 30 -1 0 25 -2 0 15 03 9 10 -5 0 figure 18. 3-carrier td-scdma acpr, alt and drain efficiency versus output power alt/acpr (dbc) -3 0 -4 0 1 5 adj-u d , drain efficiency (%) d 3-carrier td-scdma v dd = 28 v, i dq = 555 ma f = 2017.5 mhz alt-u alt-l 26 45 78 20 adj-l -58 0 p out , output power (watts) avg. -1 8 25 -2 6 20 15 0.5 10 -5 0 figure 19. 6-carrier td-scdma acpr, alt and drain efficiency versus output power -3 4 -4 2 1.5 5 adj-l d , drain efficiency (%) d alt-u alt-l alt/acpr (dbc) adj-u 2.5 3.5 4.5 5.5 6.5 7.5 6-carrier td-scdma v dd = 28 v, i dq = 560 ma f = 2017.5 mhz td-scdma test signal -80 -130 -30 (dbm) -40 -50 -60 -70 -90 -100 -1 10 -120 1.5 mhz center 2.0175 ghz span 15 mhz f, frequency (mhz) figure 20. 3-carrier td-scdma spectrum 1.28 mhz channel bw -80 -130 -30 (dbm) -40 -50 -60 -70 -90 -100 -1 10 -120 2.5 mhz center 2.0175 ghz span 25 mhz f, frequency (mhz) figure 21. 6-carrier td-scdma spectrum 1.28 mhz channel bw vbw = 300 khz sweep time = 200 ms rbw = 30 khz vbw = 300 khz sweep time = 200 ms rbw = 30 khz +alt2 in 1.28 mhz bw +3.2 mhz offset +alt1 in 1.28 mhz bw +1.6 mhz offset -al t1 in 1.28 mhz bw -1.6 mhz offset +alt2 in 1.28 mhz bw +3.2 mhz offset +alt1 in 1.28 mhz bw +1.6 mhz offset -al t1 in 1.28 mhz bw -1.6 mhz offset -al t2 in 1.28 mhz bw -3.2 mhz offset -al t2 in 1.28 mhz bw -3.2 mhz offset
12 rf device data freescale semiconductor mrf6s21060nr1 mrf6s21060nbr1 z o = 10 z load z in f = 1950 mhz f = 2070 mhz f = 2070 mhz f = 1950 mhz v dd = 28 vdc, i dq = 560 ma f mhz z in z load 1950 2.227 - j9.127 3.341 - j8.372 1960 2.168 - j8.942 3.239 - j8.218 1970 2.124 - j8.757 3.168 - j8.084 1980 2.073 - j8.606 3.083 - j7.966 1990 2.031 - j8.447 3.009 - j7.865 2000 1.987 - j8.306 2.929 - j7.743 2010 1.940 - j8.155 2.845 - j7.639 2020 1.911 - j8.000 2.775 - j7.529 2030 1.891 - j7.835 2.696 - j7.410 2040 1.856 - j7.711 2.615 - j7.309 2050 1.831 - j7.589 2.549 - j7.207 2060 1.808 - j7.461 2.479 - j7.086 2070 1.782 - j7.325 2.422 - j6.983 z in = device input impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 22. series equivalent input and load impedance td-scdma z in z load device under test output matching network input matching network
mrf6s21060nr1 mrf6s21060nbr1 13 rf device data freescale semiconductor package dimensions
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mrf6s21060nr1 mrf6s21060nbr1 19 rf device data freescale semiconductor product documentation refer to the following documents to aid your design process. application notes ? an1907: solder reflow attach method for high power rf devices in plastic packages ? an1955: thermal measurement methodology of rf power amplifiers ? an3263: bolt down mounting method for high power rf transistors and rfics in over-molded plastic packages engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices revision history the following table summarizes revisions to this document. revision date description 4 dec. 2006 ? added td-scdma to data sheet description, p. 1 ? updated part numbers in table 7, component designations and values, to rohs compliant part numbers, p. 4 ? added td-scdma test circuit schematic, component designations and values, component layout, typical characteristic curves, test signal and series impedance, p. 9-12 ? added product documentation and revision history, p. 17 5 dec. 2008 ? modified data sheet to reflect rf test reduction described in product and process change notification number, pcn13232, p. 1, 2 ? added case operating temperature limit to the maximum ratings table and set limit to 150 c, p. 1 ? operating junction temperature increased from 200 c to 225 c in maximum ratings table and related continuous use at maximum temperature will affect mttf footnote added and changed 220 c to 225 c in capable plastic package bullet, p. 1 ? corrected v ds to v dd in the rf test condition voltage callout for v gs(q) , and added measured in functional test, on characteristics table, p. 2 ? updated pcb information to show more specific material details, figs. 1, 16, test circuit schematic, p. 3, 9 ? updated part numbers in tables 6, 7, component designations and values, to latest rohs compliant part numbers, p. 3, 9 ? removed lower voltage tests from fig. 11, power gain versus output power, due to fixed tuned fixture limitations, p. 6 ? replaced fig. 12, mttf versus junction temperature with updated graph. removed amps 2 and listed operating characteristics and location of mttf calculator for device, p. 7 ? replaced case outline 1486-03, issue c, with 1486-03, issue d, p. 13-15. added pin numbers 1 through 4 on sheet 1. ? replaced case outline 1484-04, issue d, with 1484-04, issue e, p. 16-18. added pin numbers 1 through 4 on sheet 1, replacing gate and drain notations with pin 1 and pin 2 designations.
20 rf device data freescale semiconductor mrf6s21060nr1 mrf6s21060nbr1 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. typical parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including typicals, must be validated for each customer application by customer's technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2005-2006, 2008. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1-800-521-6274 or +1-480-768-2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1-8-1, shimo-meguro, meguro-ku, tokyo 153-0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1-800-441-2447 or +1-303-675-2140 fax: +1-303-675-2150 ldcforfreescalesemiconductor@hibbertgroup.com document nu mber: mrf6s21060n rev. 5, 12/2008

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